P. Tomkiewicz, S. Arabasz, B. Adamowicz, M. Miczek, J. Mizsei, D.R.T. Zahn, H. Hasegawa, J. Szuber, 2009. Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation. Surface Science603, 3: 498-502
P. Tomkiewicz, B. Adamowicz, M. Miczek, H. Hasegawa, J. Szuber, 2008. Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency. Applied Surface Science254, 24: 8046-8049
B. Adamowicz, M. Miczek, T. Hashizume, A. Klimasek, P. Bobek (Bidziński), J. Żywicki, 2007. Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers. Optica Applicata37, 4: 327-334
C. Mizue, T. Matsuyama, J. Kotani, M. Miczek, T. Hashizume, 2007. UV-response characteristics of insula-tor/n-GaN MIS structures for sensor application. IEICE Technical Report107, no. 2: 43-46
W. Izydorczyk, B. Adamowicz, M. Miczek, K. Waczyński, 2006. Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO2 surface and near-surface region. Physica Status Solidi A203, 9: 2241-2246
Z. Benamara, N. Mecirdi, B. Bachir Bouiadjra, L. Bideux, B. Gruzza, C. Robert, M. Miczek, B. Adamowicz, 2006. XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation. Applied Surface Science252, 22: 7890-7894
H. Kato, M. Miczek, T. Hashizume, 2006. C-V characterization of GaN-based MIS structures at high temperatures. IEICE Technical Report105, 521: 13-16
M. Miczek, B. Adamowicz, T. Hashizume, H. Hasegawa, 2005. Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces. Optica Applicata35, 3: 355-361
, 2004. O pewnym prostym zadaniu z teorii względności. Foton86: 46-47
B. Adamowicz, M. Miczek, C. Brun, B. Gruzza, H. Hasegawa, 2003. Rigorous analysis of the electronic properties of InP interfaces for gas sensing. Thin Solid Films436, 1: 101-106
M. Miczek, B. Adamowicz, H. Hasegawa, 2002. Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic-algorithm-based fitting procedure. Surface Science507-510: 240-244
B. Adamowicz, M. Miczek, S. Arabasz, H. Hasegawa, 2002. Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces. Vacuum67, 1: 3-10
M. Miczek, B. Adamowicz, H. Hasegawa, 2002. Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence. Optica Applicata32, 3: 227-233
M. Miczek, B. Adamowicz, J. Szuber, H. Hasegawa, 2001. Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum. Vacuum63, 1-2: 223-227
B. Adamowicz, M. Miczek, T. Domagała, H. Hasegawa, 2001. Determination of the surface state density distribution and Fermi level position on the InP(100) surface from excitation-power-dependent photoluminescence efficiency spectra. Elektronika42, 8-9: 76-78
B. Adamowicz, M. Miczek, H. Hasegawa, 2000. Computer analysis of the Fermi level behavior at SiO2/n-Si and SiO2/n-GaAs Interfaces. Electron Technology33: 249-252
B. Adamowicz, M. Miczek, K. Ikeya, M. Mutoh, T. Saitoh, H. Fujikura, H. Hasegawa, 1999. Electronic properties of AlxGa1-xAs surface passivated by ultrathin silicon interface control layer. Applied Surface Science141, 3-4: 326-332
M. Miczek, T. Pustelny, 1997. Electroacoustic transducers working in the audible range of frequency. Molecular and Quantum Acoustics18: 193-207