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Division of Applied Physics

Contact image
prof. at SUT
Address:
ul. Konarskiego 22B/116
Gliwice
44-100
Polska
Email:
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Phone:
+48 32 237 2407
Miscellaneous Information:

Research groups

Publications

  • Matys M., Kaneki S., Nishiguchi K., Adamowicz B., Hashizume T., 2017. Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. Journal of Applied Physics 122(22). https://doi.org/10.1063/1.5000497 [Scopus - Elsevier]
  • Matys M., Adamowicz B., 2017. Mechanism of yellow luminescence in GaN at room temperature. Journal of Applied Physics 121(6). https://doi.org/10.1063/1.4975116 [Scopus - Elsevier]
  • Matys M., Stoklas R., Blaho M., Adamowicz B., 2017. Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition. Applied Physics Letters 110(24). https://doi.org/10.1063/1.4986482 [Scopus - Elsevier]
  • Matys M., Stoklas R., Kuzmik J., Adamowicz B., Yatabe Z., Hashizume T., 2016. Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures. Journal of Applied Physics 119(20). https://doi.org/10.1063/1.4952708 [Scopus - Elsevier]
  • Matys M., Adamowicz B., Zytkiewicz Z.R., Taube A., Kruszka R., Piotrowska A., 2016. High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films. Applied Physics Letters 109(5). https://doi.org/10.1063/1.4960484 [Scopus - Elsevier]
  • Matys M., Adamowicz B., Domanowska A., Michalewicz A., Stoklas R., Akazawa M., Yatabe Z., Hashizume T., 2016. On the origin of interface states at oxide/III-nitride heterojunction interfaces. Journal of Applied Physics 120(22). https://doi.org/10.1063/1.4971409 [Scopus - Elsevier]
  • Matys M., Adamowicz B., Hashizume T., 2013. A novel method for the determination of the full energetic distribution of interface state density in metal/insulator/GaN structures from capacitance - Voltage and photocapacitance - Light intensity measurements. AIP Conference Proceedings 1566: 57–58. https://doi.org/10.1063/1.4848283 [Scopus - Elsevier]
  • Matys M., Adamowicz B., Hori Y., Hashizume T., 2013. Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O 3/AlGaN/GaN by photocapacitance method. Applied Physics Letters 103(2). https://doi.org/10.1063/1.4813407 [Scopus - Elsevier]
  • Matys M., Powroznik P., Kupka D., Adamowicz B., 2013. Two-dimensional modeling of surface photovoltage in metal/insulator/n-GaN structure with cylindrical symmetry. Optica Applicata 43(1): 47–52. https://doi.org/10.5277/oa130106 [Scopus - Elsevier]
  • Matys M., Adamowicz B., Hashizume T., 2012. Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement. Applied Physics Letters 101(23). https://doi.org/10.1063/1.4769815 [Scopus - Elsevier]
  • Wierzbowska K., Adamowicz B., Lauron B., Bideux L., 2012. Role of interface states and depletion layer in NO2sensing mechanism of n-InP epitaxial layers. Sensors and Actuators, A: Physical 181: 43–50. https://doi.org/10.1016/j.sna.2012.05.007 [Scopus - Elsevier]
  • Domanowska A., Miczek M., Ucka R., Matys M., Adamowicz B., Zywicki J., Taube A., Korwin-Mikke K., Gierałtowska S., Sochacki M., 2012. Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures. Applied Surface Science 258(21): 8354–8359. https://doi.org/10.1016/j.apsusc.2012.03.172 [Scopus - Elsevier]
  • Domanowska A., Adamowicz B., Bidziński P., Klimasek A., Szewczenko J., Gutt T., Przewłocki H., 2011. Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces. Optica Applicata 41(2): 441–447. [Scopus - Elsevier]
  • Bidzinski P., Miczek M., Adamowicz B., Mizue C., Hashizume T., 2011. Impact of interface states and bulk carrier lifetime on photocapacitance of metal/insulator/GaN structure for ultraviolet light detection. Japanese Journal of Applied Physics 50(4 PART 2). https://doi.org/10.1143/JJAP.50.04DF08 [Scopus - Elsevier]
  • Miczek M., Bidziński P., Adamowicz B., Mizue C., Hashizume T., 2011. The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure. Solid State Communications 151(11): 830–833. https://doi.org/10.1016/j.ssc.2011.03.021 [Scopus - Elsevier]
  • Adamowicz B., Miczek M., Bidzinski P., Hashizume T., 2010. Modeling of metal/insulator/GaN ultraviolet photodetector by finite element method. 4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings. [Scopus - Elsevier]
  • Hasegawa H., Akazawa M., Domanowska A., Adamowicz B., 2010. Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future. Applied Surface Science 256(19): 5698–5707. https://doi.org/10.1016/j.apsusc.2010.03.091 [Scopus - Elsevier]
  • Akazawa M., Domanowska A., Adamowicz B., Hasegawa H., 2009. Capacitance-voltage and photoluminescence study of high- k/GaAs interfaces controlled by Si interface control layer. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27(4): 2028–2035. https://doi.org/10.1116/1.3167361 [Scopus - Elsevier]
  • Miczek M., Adamowicz B., Mizue C., Hashizume T., 2009. Simulations of capacitance-voltage-temperature behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN structures. Japanese Journal of Applied Physics 48(4 PART 2). https://doi.org/10.1143/JJAP.48.04C092 [Scopus - Elsevier]
  • Tomkiewicz P., Arabasz S., Adamowicz B., Miczek M., Mizsei J., Zahn D.R.T., Hasegawa H., Szuber J., 2009. Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation. Surface Science 603(3): 498–502. https://doi.org/10.1016/j.susc.2008.12.009 [Scopus - Elsevier]
  • Wierzbowska K., Bideux L., Adamowicz B., Pauly A., 2008. A novel III-V semiconductor material for NO2detection and monitoring. Sensors and Actuators, A: Physical 142(1): 237–241. https://doi.org/10.1016/j.sna.2007.02.021 [Scopus - Elsevier]
  • Miczek M., Mizue C., Hashizume T., Adamowicz B., 2008. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors. Journal of Applied Physics 103(10). https://doi.org/10.1063/1.2924334 [Scopus - Elsevier]
  • Adamowicz B., Izydorczyk W., Izydorczyk J., Klimasek A., Jakubik W., Zywicki J., 2008. Response to oxygen and chemical properties of SnO2thin-film gas sensors. Vacuum 82(10): 966–970. https://doi.org/10.1016/j.vacuum.2008.01.003 [Scopus - Elsevier]
  • Wierzbowska K., Adamowicz B., Lauron B., Pauly A., Bideux L., 2008. Rigorous analysis of electronic properties and AFM studies of oxidising gas sensitive n-InP epitaxial layers. Journal of Physics: Conference Series 100(PART 7). https://doi.org/10.1088/1742-6596/100/7/072016 [Scopus - Elsevier]
  • Tomkiewicz P., Adamowicz B., Miczek M., Hasegawa H., Szuber J., 2008. Surface state density distribution at vacuum-annealed InP(1 0 0) surface as derived from the rigorous analysis of photoluminescence efficiency. Applied Surface Science 254(24): 8046–8049. https://doi.org/10.1016/j.apsusc.2008.03.020 [Scopus - Elsevier]
  • Adamowicz B., Miczek M., Hashizume T., Klimasek A., Bobek P., Zywicki J., 2007. Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4and SiNx/Si3N4bilayers. Optica Applicata 37(4): 327–334. [Scopus - Elsevier]
  • Izydorczyk W., Adamowicz B., 2007. Computer analysis of oxygen adsorption at SnO2 thin films. Optica Applicata 37(4): 377–386. [Scopus - Elsevier]
  • Izydorczyk W., Adamowicz B., Miczek M., Waczynski K., 2006. Computer analysis of an influence of oxygen vacancies on the electronic properties of the SnO 2 surface and near-surface region. Physica Status Solidi (A) Applications and Materials Science 203(9): 2241–2246. https://doi.org/10.1002/pssa.200566016 [Scopus - Elsevier]
  • Hasegawa H., Sato T., Kasai S., Adamowicz B., Hashizume T., 2006. Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures. Solar Energy 80(6): 629–644. https://doi.org/10.1016/j.solener.2005.10.014 [Scopus - Elsevier]
  • Arabasz S., Adamowicz B., Petit M., Gruzza B., Robert-Goumet Ch., Piwonski T., Bugajski M., Hasegawa H., 2006. Room temperature photoluminescence studies of nitrided InP(100) surfaces. Materials Science and Engineering C 26(2-3): 378–382. https://doi.org/10.1016/j.msec.2005.10.032 [Scopus - Elsevier]
  • Wierzbowska K., Pauly A., Adamowicz B., Bideux L., 2006. Studies of gas sensing, electrical and chemical properties of n-InP epitaxial surfaces. Physica Status Solidi (A) Applications and Materials Science 203(9): 2281–2286. https://doi.org/10.1002/pssa.200566030 [Scopus - Elsevier]
  • Benamara Z., Mecirdi N., Bouiadjra B.B., Bideux L., Gruzza B., Robert C., Miczek M., Adamowicz B., 2006. XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation. Applied Surface Science 252(22): 7890–7894. https://doi.org/10.1016/j.apsusc.2005.09.056 [Scopus - Elsevier]
  • Wierzbowska K., Adamowicz B., Mazet L., Brunet J., Pauly A., Bideux L., Varenne C., Berry L., Germain J.-P., 2005. High-sensitivity NO2 sensor based on n-type InP epitaxial layers. Optica Applicata 35(4): 655–662. [Scopus - Elsevier]
  • Miczek M., Adamowicz B., Hashizume T., Hasegawa H., 2005. Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces. Optica Applicata 35(4): 355–362. [Scopus - Elsevier]
  • Petit M., Robert-Goumet C., Bideux L., Gruzza B., Matolin V., Arabasz S., Adamowicz B., Wawer D., Bugajski M., 2005. Passivation of InP(100) substrates: First stages of nitridation by thin InN surface overlayers studied by electron spectroscopies. Surface and Interface Analysis 37(7): 615–620. https://doi.org/10.1002/sia.2045 [Scopus - Elsevier]
  • Adamowicz B., Miczek M., Brun C., Gruzza B., Hasegawa H., 2003. Rigorous analysis of the electronic properties of InP interfaces for gas sensing. Thin Solid Films 436(1): 101–106. https://doi.org/10.1016/S0040-6090(03)00519-4 [Scopus - Elsevier]
  • Miczek M., Adamowicz B., Hasegawa H., 2002. Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence. Optica Applicata 32(3): 227–233. [Scopus - Elsevier]
  • Miczek M., Adamowicz B., Hasegawa H., 2002. Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure. Surface Science 507-510: 240–244. https://doi.org/10.1016/S0039-6028(02)01253-0 [Scopus - Elsevier]
  • Adamowicz B., Miczek M., Arabasz S., Hasegawa H., 2002. Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(1 0 0) surfaces. Vacuum 67(1): 3–10. https://doi.org/10.1016/S0042-207X(02)00194-X [Scopus - Elsevier]
  • Miczek M., Adamowicz B., Szuber J., Hasegawa H., 2001. Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum. Vacuum 63(1-2): 223–227. https://doi.org/10.1016/S0042-207X(01)00195-6 [Scopus - Elsevier]
  • Szuber J., Czempik G., Larciprete R., Koziej D., Adamowicz B., 2001. XPS study of the L-CVD deposited SnO2thin films exposed to oxygen and hydrogen. Thin Solid Films 391(2): 198–203. https://doi.org/10.1016/S0040-6090(01)00982-8 [Scopus - Elsevier]
  • Adamowicz B., Hasegawa H., 2000. Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers. Thin Solid Films 367(1-2): 180–183. https://doi.org/10.1016/S0040-6090(00)00685-4 [Scopus - Elsevier]
  • Szuber J., Czempik G., Larciprete R., Adamowicz B., 2000. Comparative XPS and PYS studies of SnO2thin films prepared by L-CVD technique and exposed to oxygen and hydrogen. Sensors and Actuators, B: Chemical 70(1-3): 177–181. https://doi.org/10.1016/S0925-4005(00)00564-5 [Scopus - Elsevier]
  • Adamowicz B., Hasegawa H., 2000. Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces. Vacuum 57(2): 111–120. https://doi.org/10.1016/S0042-207X(00)00129-9 [Scopus - Elsevier]
  • Adamowicz B., Miczek M., Hasegawa H., 2000. Computer analysis of the Fermi level behaviour at SiO2/n-Si and SiO2/n-GaAs interfaces. Electron Technology (Warsaw) 33(1): 249–252. [Scopus - Elsevier]
  • Bilski M., Kaszczyszyn S., Grzadziel L., Adamowicz B., Szuber J., 2000. Surface photovoltage spectroscopy system for in situ studies of metal phthalocyanine thin films. Electron Technology (Warsaw) 33(1): 289–291. [Scopus - Elsevier]
  • Adamowicz B., Hasegawa H., 1999. Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum. Vacuum 54(1-4): 173–177. https://doi.org/10.1016/S0042-207X(98)00455-2 [Scopus - Elsevier]
  • Adamowicz B., Miczek M., Ikeya K., Mutoh M., Saitoh T., Fujikura H., Hasegawa H., 1999. Electronic properties of AlxGa1-xAs surface passivated by ultrathin silicon interface control layer. Applied Surface Science 141(3-4): 326–332. https://doi.org/10.1016/S0169-4332(98)00519-4 [Scopus - Elsevier]
  • Adamowicz B., Hasegawa H., 1998. Computer analysis of surface recombination process at Si and compound semiconductor surfaces and behavior of surface recombination velocity. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 37(3 SUPPL. B): 1631–1637. [Scopus - Elsevier]
  • Adamowicz B., Ikeya K., Mutoh M., Saitoh T., Fujikura H., Hasegawa H., 1998. Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer. Physica E: Low-Dimensional Systems and Nanostructures 2(1-4): 261–266. https://doi.org/10.1016/S1386-9477(98)00055-1 [Scopus - Elsevier]
  • Adamowicz B., Grilli M.L., Pedio M., Ottaviani C., Campo A., Capozi M., Quaresima C., Perfetti P., 1995. Inverse photoemission and Kelvin probe studies of the Au/GaP(110) interface. Vacuum 46(5-6): 509–512. https://doi.org/10.1016/0042-207X(94)00118-9 [Scopus - Elsevier]
  • Adamowicz B., 1994. Dependence of silicon surface electronic parameters on surface Fermi level position. Vacuum 45(2-3): 167–170. https://doi.org/10.1016/0042-207X(94)90162-7 [Scopus - Elsevier]
  • Adamowicz B., Szuber J., 1991. Near-band gap transitions in the surface photovoltage spectra for GaAs, GaP and Si surfaces. Surface Science 247(2-3): 94–99. https://doi.org/10.1016/0039-6028(91)90112-6 [Scopus - Elsevier]
  • Adamowicz B., 1990. Investigation of electron processes at the p and n type Si(111) real surface by the surface photovoltage method. Surface Science 231(1-2): 1–8. https://doi.org/10.1016/0039-6028(90)90683-Y [Scopus - Elsevier]
  • Szuber J., Adamowicz B., 1988. Electronic properties of the clean and oxygen exposed GaAs(100) surface. Studies in Surface Science and Catalysis 40(C): 229–231. https://doi.org/10.1016/S0167-2991(08)65050-8 [Scopus - Elsevier]
  • Adamowicz B., Kochowski S., 1988. The contribution of surface effects to the surface photovoltage dependence on temperature for the real Si(111) surface. Surface Science 200(2-3): 172–178. https://doi.org/10.1016/0039-6028(88)90517-1 [Scopus - Elsevier]

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